Achieving the vision and promise of 6G (and beyond) wireless communication systems, as well as radar and other applications, requires significant advancements in device technologies. To obtain the high bandwidths required on a mobile platform, devices offering high levels of millimeter-wave performance (i.e. low noise figure, high linearity, and high power efficiency) with low power consumption are essential. Reconfigurability in order to support frequency-agile and compact implementations is also critical. The unique properties of the III-N material system (e.g. polarization, LO phonon mediated electron transport) enable new approaches for designing millimeter-wave transistors for power amplifiers, low-noise amplifiers, and signal switching and routing. The integration of ferroelectrics with III-N transistors also provides opportunities for increased functional density and improved performance in signal switching and routing applications. In this talk, recent advances in these areas will be presented.
Speaker Biography Patrick Fay is a Professor in the Dept. of Electrical Engineering at the University of Notre Dame; he received a Ph.D. in electrical engineering from the University of Illinois at Urbana-Champaign in 1996. His research focuses on the design, fabrication, and characterization of microwave and millimeter-wave electronic devices and circuits, power device design and fabrication, as well as the use of micromachining techniques for the fabrication of RF through sub-millimeter-wave packaging. He established the High Speed Circuits and Devices Laboratory at Notre Dame, as well as oversaw the design, construction, and commissioning of the 9000 sq. ft. class 100 cleanroom housed in Stinson-Remick Hall at Notre Dame, where he has served as the director of this facility since 2003. Prof. Fay is a fellow of the IEEE, is an IEEE Electron Devices Society Distinguished Lecturer, and has published 11 book chapters and more than 400 articles in scientific journals and conference proceedings.